Novel Buried Field Rings Edge Termination for 4H-SiC High-Voltage Devices
Novel Buried Field Rings Edge Termination for 4H-SiC High-Voltage Devices
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DOI：
10.4028/www.scientific.net/msf.433-436.891
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发表时间：
2003-07
期刊：
影响因子：
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通讯作者：
A. Mihaila;F. Udrea;P. Godignon;T. Trajkovic;G. Brezeanu;J. Rebollo;J. Millán
中科院分区：
文献类型：
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作者：
A. Mihaila;F. Udrea;P. Godignon;T. Trajkovic;G. Brezeanu;J. Rebollo;J. Millán
本文对4 H-SiC高压器件的一种新的边缘测量技术进行了数值研究。首次提出了将埋场环（BFR）作为一种有效的端接方法应用于SiC器件中，并以4 H-SiC梅萨JFET结构为例进行了数值验证。通过在梅萨JFET的外围使用4个BFR，已经实现了1590 V的击穿电压，代表了理想体击穿值（1750 V）的90%以上。环的掺杂浓度的敏感性和SiC/SiO2界面电荷的阻断能力的影响进行了研究，证明了新概念的工艺条件和掺杂变化的鲁棒性。为了比较，也给出了GRs和JTE的一些结果。
This paper is concerned with a numerical study of a novel edge te rmination technique for 4H-SiC high voltage devices. For the first time, Buried Field Rings (BFRs) are proposed to be used in SiC devices as an effective termination method and the concept is numerical ly demonstrated for 4H-SiC MESA JFET structures. By using 4 BFRs at the periphe ry of a MESA JFET, a breakdown voltage of 1590V has been achieved, representing more than 90% of the ideal bulk breakdown value (1750V). The doping concentration sensitivity of the rings and the effect of the SiC/SiO2 interface charge on the blocking capability are studied, evidencing the robustness of the novel concept in terms of process conditions and doping variations. For compar ison, some results for GRs and JTE are also presented.