A G-Band Monolithically Integrated Quasi-Optical Zero-Bias Detector Based on Heterostructure Backward Diodes Using Submicrometer Airbridges
A G-Band Monolithically Integrated Quasi-Optical Zero-Bias Detector Based on Heterostructure Backward Diodes Using Submicrometer Airbridges
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基于亚微米气桥异质结构后向二极管的G波段单片集成准光学零偏置探测器
DOI：
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发表时间：
2018
影响因子：
4.3
通讯作者：
Lei Liu
中科院分区：
文献类型：
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作者：
S. Rahman;Zhenguo Jiang;M. I. Shams;P. Fay;Lei Liu
介绍了一种基于单片集成异质结反向二极管（HBDs）的零偏压准光学太赫兹探测器的设计、制作和特性。所报道的探测器包括HBDs与<inline-formula><tex-math notation="LaTeX">0.7\times 0.7\mu \text{m}^{2}$的</tex-math></inline-formula>有源器件面积和亚微米级的空气桥，集成透镜耦合高阻抗平面折叠偶极天线。HBD探测器的测量结果表明，峰值测量探测器的灵敏度约为2400 V/W和最小噪声等效功率（NEP<sub>最小值</sub>）为2.14 pW/<inline-formula><tex-math notation="LaTeX">$\surd $</tex-math></inline-formula>Hz已获得在170 GHz。如果在透镜上使用抗反射涂层，则预计灵敏度约为3500 V/W，NEP<sub>最小值</sub>为1.48 pW/<inline-formula><tex-math notation="LaTeX">$\surd $</tex-math></inline-formula>Hz。测量了准光探测器在<inline-formula><tex-math notation="LaTeX">E面</tex-math></inline-formula>和<inline-formula><tex-math notation="LaTeX">H面</tex-math></inline-formula>的辐射方向图，模拟结果与测量结果吻合较好。通过缩放HBD器件的有源面积，可以进一步提高该检测器的性能。报道的方法使用单片集成异质结构反向隧穿二极管和亚微米空气桥是有前途的高性能和紧凑的探测器和焦平面阵列毫米波和太赫兹传感和成像应用。
This paper presents the design, fabrication, and characterization of a zero-bias quasi-optical terahertz detector based on monolithically integrated heterostructure backward diodes (HBDs) for operation at G-band. The reported detectors consist of HBDs with <inline-formula> <tex-math notation="LaTeX">$0.7 \times 0.7 ~\mu \text{m}^{2}$ </tex-math></inline-formula> active device area and submicrometer-scale airbridges, integrated with lens-coupled high-impedance planar folded dipole antennas. Measurements of the HBD detector show that a peak-measured detector sensitivity of approximately 2400 V/W and a minimum noise equivalent power (NEP<sub>min</sub>) of 2.14 pW/<inline-formula> <tex-math notation="LaTeX">$\surd $ </tex-math></inline-formula>Hz have been obtained at 170 GHz. If an antireflection coating was used on the lens, a sensitivity of approximately 3500 V/W and NEP<sub>min</sub> of 1.48 pW/<inline-formula> <tex-math notation="LaTeX">$\surd $ </tex-math></inline-formula>Hz is projected. The radiation patterns of the quasi-optical detector in both <inline-formula> <tex-math notation="LaTeX">$E$ </tex-math></inline-formula>- and <inline-formula> <tex-math notation="LaTeX">$H$ </tex-math></inline-formula>-planes have been measured, and good agreement has been achieved between simulation and measurement. The performance of this detector can be further improved by scaling the HBD device active area. The reported approach using monolithically integrated heterostructure backward tunneling diodes and submicrometer airbridges is promising for developing high performance and compact detectors and focal-plane arrays for millimeter-wave and terahertz sensing and imaging applications.