Growth and fabrication of a mid-wavelength infrared focal plane array based on type-II InAs/GaSbsuperlattices
Growth and fabrication of a mid-wavelength infrared focal plane array based on type-II InAs/GaSbsuperlattices
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DOI：
10.1088/1674-4926/34/11/114012
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发表时间：
2013-11
影响因子：
5.1
通讯作者：
W. Guowei;Xiang Wei;Xu Yingqiang;Zhang Liang;Peng Zhen-Yu;L. Yanqiu;Si Jun-jie;Wang Juan;Xing Junliang;Ren Zhengwei;Niu Zhi-chuan
中科院分区：
文献类型：
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作者：
W. Guowei;Xiang Wei;Xu Yingqiang;Zhang Liang;Peng Zhen-Yu;L. Yanqiu;Si Jun-jie;Wang Juan;Xing Junliang;Ren Zhengwei;Niu Zhi-chuan
我们提出了基于 II 型 InAs/GaSb 应变层超晶格 (SL) 的中波长红外焦平面阵列 (FPA) 的制造。探测器包含 400 周期 8 ML InAs/8 ML GaSb SL 有源层，该有源层通过固源分子束外延在 GaSb (100) N 型基板上生长。超晶格和GaSb衬底之间的晶格失配达到148.9 ppm。 X射线衍射的一级卫星峰的半峰全宽为28角秒。使用基于柠檬酸的溶液湿化学蚀刻来制造具有 128 × 128 像素的单元件探测器和 FPA。化学和物理钝化有效地减少了表面泄漏，并且通过I—V测量对该过程进行了表征。该器件在 77 K 时的 50% 截止波长为 4.73 μm。光电二极管的 R0A 为 103 Ω cm2。 FPA 的积分时间为 0.5 ms，光学器件在 77 K 下为 F/2.0，探测器的平均黑体探测率为 2.01 × 109 cm Hz1/2/W。
We present the fabrication of a mid-wavelength infrared focal plane array (FPA) based on type-II InAs/GaSb strain layer superlattices (SLs). The detectors contain a 400-period 8 ML InAs/8 ML GaSb SL active layer, which is grown by solid source molecular beam epitaxy on GaSb (100) N type substrates. Lattice mismatch between the superlattices and GaSb substrate achieves 148.9 ppm. The full width at half maximum of the first order satellite peak from X-ray diffraction was 28 arcsec. Single element detectors and FPA with a 128 × 128 pixels were fabricated using citric acid based solution wet chemical etching. Chemical and physical passivation effectively reduces the surface leakage and this process was characterized by I—V measurement. The devices showed a 50% cut-off wavelength of 4.73 μm at 77 K. The photodiode exhibited an R0A of 103 Ω cm2. The FPA was characterized with an integration time of 0.5 ms and F/2.0 optics at 77 K and the average blackbody detectivity of the detectors is 2.01 × 109 cm Hz1/2/W.