Effect of In segregation on the structural and optical properties of ultrathin InAs films in GaAs
Effect of In segregation on the structural and optical properties of ultrathin InAs films in GaAs
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In偏析对GaAs中超薄InAs薄膜结构和光学性能的影响
DOI：
10.1063/1.108046
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发表时间：
1992
影响因子：
4
通讯作者：
M. Hohenstein
中科院分区：
文献类型：
--
作者：
O. Brandt;L. Tapfer;K. Ploog;R. Bierwolf;M. Hohenstein
我们通过分子束外延研究了 InAs 单层 (ML) 与 GaAs 过度生长过程中 In 的偏析。通过反射高能电子衍射原位观察到生长表面存在偏析的 In 吸附原子（In 浮层）。我们证明（i）偏析过程导致 0.4 ML 的 In 空间扩散到 GaAs 覆盖层的前 4-5 ML 中，并且（ii）这种扩散可以通过过度生长（闪蒸）初始阶段 In 浮置层的热解吸来抑制。事实上，闪蒸方法在 GaAs 矩阵中创建了单个 InAs ML。
We study the segregation of In during the overgrowth of an InAs monolayer (ML) with GaAs by molecular beam epitaxy. The presence of segregating In adatoms (In floating layer) at the growth surface is observed in situ by reflection high‐energy electron diffraction. We demonstrate (i) that the segregation process causes a spatial spread‐out of 0.4 ML of In into the first 4–5 ML of the GaAs overlayer and (ii) that this spread‐out can be inhibited by the thermal desorption of the In floating layer in the initial stage of overgrowth (flash‐off). The flash‐off approach creates in fact a single InAs ML in the GaAs matrix.