Assessment and Modification of Recombination Dynamics in InxGa1-xN-Based Quantum Wells, Advances in Light Emitting Materials, Materials Science Forum

Assessment and Modification of Recombination Dynamics in InxGa1-xN-Based Quantum Wells, Advances in Light Emitting Materials, Materials Science Forum
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基于 InxGa1-xN 的量子阱中复合动力学的评估和修改,发光材料的进展,材料科学论坛

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发表时间:
2008
期刊:
影响因子:
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通讯作者:
M. Funato
M. Funato
中科院分区:
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文献类型:
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作者:
Y. Kawakami;A. Kaneta;M. Funato

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