DNA-based doping and fabrication of PN diodes
DNA-based doping and fabrication of PN diodes
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DOI：
10.3389/fnano.2024.1291328
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发表时间：
2024-02
影响因子：
--
通讯作者：
Ruobing Bai;Yihan Liu;Bomin Zhang;Beishan Chen;Feng Xiong;Haitao Liu
中科院分区：
文献类型：
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作者：
Ruobing Bai;Yihan Liu;Bomin Zhang;Beishan Chen;Feng Xiong;Haitao Liu
本文报道了用DNA纳米结构作为SiO_2的刻蚀模板和Si的n型掺杂剂制备硅PN二极管。将DNA纳米管沉积在具有热SiO2层的p型硅片上。DNA纳米管催化HF蒸汽对SiO2的蚀刻，以暴露下面的Si。利用DNA纳米管中的磷酸基团作为掺杂源，对Si进行局部n掺杂，形成垂直的P-N结。制作了原型PN二极管，并表现出预期的阻塞行为，膝点电压约为1.5V。0.7我们的工作突出了DNA纳米技术在未来纳米电子制造中的潜力。
This paper reports the fabrication of silicon PN diode by using DNA nanostructure as the etching template for SiO2 and also as the n-dopant of Si. DNA nanotubes were deposited onto p-type silicon wafer that has a thermal SiO2 layer. The DNA nanotubes catalyze the etching of SiO2 by HF vapor to expose the underlying Si. The phosphate groups in the DNA nanotube were used as the doping source to locally n-dope the Si wafer to form vertical P-N junctions. Prototype PN diodes were fabricated and exhibited expected blockage behavior with a knee voltage of ca. 0.7 V. Our work highlights the potential of DNA nanotechnology in future fabrication of nanoelectronics.