1/f noise suppression of pMOSFETs fabricated on Si(100) and Si(110) using an alkali-free cleaning process
1/f noise suppression of pMOSFETs fabricated on Si(100) and Si(110) using an alkali-free cleaning process
复制标题
使用无碱清洗工艺在 Si(100) 和 Si(110) 上制造的 pMOSFET 的 1/f 噪声抑制
DOI：
10.1109/ted.2006.871188
复制
发表时间：
2006
影响因子：
3.1
通讯作者：
T. Ohmi
中科院分区：
文献类型：
--
作者：
P. Gaubert;A. Teramoto;T. Hamada;M. Yamamoto;K. Kotani;T. Ohmi
本文报道了在[110]和（100）晶向硅上制作的p沟MOSFET的低频噪声与硅表面的微观粗糙度有关。由于传统的RCA清洗工艺使表面粗糙，特别是在[110]取向的情况下，作者开发了不使用碱性溶液的所谓5步室温清洗工艺。这种新的清洁工艺与用于形成栅极氧化物的微波激发高密度等离子体氧化工艺的组合，而不是标准的900/spl deg/C热氧化工艺，导致微粗糙度的降低和1/f噪声水平的下降超过十倍。此外，这种减少不仅在[110]取向上观察到，而且在（100）取向上也观察到，尽管程度小得多，如果以相同的方式处理的话。
This paper reports that the low-frequency noise in p-channel MOSFETs fabricated on [110] and (100) crystallographic oriented silicon is related to the microroughness of the silicon surface. Since the conventional RCA cleaning process makes the surface rough, especially in the case of [110] orientation, the authors developed the so-called 5-step room temperature cleaning process that does not use alkaline solution. The combination of this new cleaning process with the microwave-excited high-density plasma oxidation process for the formation of the gate oxide, instead of the standard 900/spl deg/C thermal oxidation process, leads to a reduction of the microroughness and a drop in the 1/f noise level of more than one decade. Furthermore, this reduction is not only observed for the [110] orientation but also seen, albeit to a much lesser extent, for (100) if it is treated in the same way.
用于模拟/数字混合信号电路的 Si(100) 表面低噪声平衡 CMOS
DOI：
--
发表时间：
2003
期刊：
2003 IEEE International ELECTRON DEVICES MEETING
影响因子：
--
作者：
A.Teramoto;T.Hamada;H.Akahori;K.Nii;T.Suwa;K.Kotani;M.Hirayama;S.Sugawa;T.Ohmi
通讯作者：
T.Ohmi