Physical investigation of electrophoretically deposited graphene oxide and reduced graphene oxide thin films

Physical investigation of electrophoretically deposited graphene oxide and reduced graphene oxide thin films
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DOI:
10.1063/1.4968000
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发表时间:
2016-11
影响因子:
3.2
通讯作者:
G. Politano;C. Versace;C. Vena;M. Castriota;F. Ciuchi;A. Fasanella;G. Desiderio;E. Cazzanelli
G. Politano;C. Versace;C. Vena;M. Castriota;F. Ciuchi;A. Fasanella;G. Desiderio;E. Cazzanelli
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
G. Politano;C. Versace;C. Vena;M. Castriota;F. Ciuchi;A. Fasanella;G. Desiderio;E. Cazzanelli

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Graphene oxide and reduced graphene oxide thin films are very promising materials because they can be used in optoelectronic devices and in a growing range of applications such as touch screens and flexible displays. In this work, graphene oxide (GO) and thermally reduced graphene oxide (rGO) thin films, deposited on Ti/glass substrates, have been obtained by electrophoretic deposition. The morphological and the structural properties of the samples have been investigated by micro-Raman technique, X-ray reflectometry, and SEM analysis. In order to study the optical and electrical properties, variable angle spectroscopic ellipsometry and impedance analysis have been performed. The thermal annealing changes strongly the structural, electrical, and optical properties, because during the thermal processes some amount of sp3 bonds originally present in GO were removed. In particular, the annealing enhances the Ohmic behavior of the rGO film increasing its conductivity and the estimated optical density. Moreover...