An approach to quantitative compositional profiling at near-atomic resolution using high-angle annular dark field imaging
An approach to quantitative compositional profiling at near-atomic resolution using high-angle annular dark field imaging
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DOI：
10.1016/s0304-3991(97)00041-7
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发表时间：
1997-09-01
期刊：
影响因子：
2.2
通讯作者：
Cockayne, DJH
中科院分区：
文献类型：
--
作者：
Anderson, SC;Birkeland, CR;Cockayne, DJH
通过对高分辨大角度环形暗场像的分析，研究了GaAs/Al_（0.6）Ga_（0.4）As界面的成分分布。图像计算进行了使用多片代码，采用热漫散射，和算法开发这些图像和实验图像之间的定量匹配。所得到的成分配置文件（单层空间分辨率）与类似的定量化学映射实验进行比较。这种新技术的扩展，以高分辨率的成分映射（在两个维度）进行了简要的探讨。
The compositional profile of a GaAs/Al0.6Ga0.4As interface is investigated through analysis of a high resolution high-angle annular dark field image. Image calculations are carried out using a multislice code that incorporates thermal diffuse scattering, and an algorithm is developed for quantitative matching between these images and the experimental image. The resulting compositional profile (with monolayer spatial resolution) is compared with an analogous quantitative chemical mapping experiment. The extension of this new technique to high resolution compositional mapping (in two dimensions) is briefly explored.