Calculated Electron Mobility of Two-Dimensional Electrons in AlInAs/InGaAs and InP/InGaAs Single Heterostructures
Calculated Electron Mobility of Two-Dimensional Electrons in AlInAs/InGaAs and InP/InGaAs Single Heterostructures
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AlInAs/InGaAs 和 InP/InGaAs 单异质结构中二维电子的计算电子迁移率
DOI：
10.1143/jjap.24.1307
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发表时间：
1985
期刊：
影响因子：
--
通讯作者：
A. Sasaki
中科院分区：
文献类型：
--
作者：
Y. Takeda;A. Sasaki
采用自一致变分技术计算了AlInAs/InGaAs和InP/InGaAs单异质结构中二维电子在异质界面处的迁移率。给出了总迁移率和各散射限制迁移率与片电子浓度的关系。证明了合金-散射-限制迁移率的优势。给出了以AlInAs为势垒的无合金散射的InAs/GaAs单层超晶格中二维电子迁移率的模型计算。
The self-consistent variational technique is used to calculate the mobility of two-dimensional electrons at the hetero-in-terfaces in AlInAs/InGaAs and InP/InGaAs single heterostructures. The sheet electron concentration dependence of the total mobility and each-scattering-limited mobility are shown. The predominance of the alloy-scattering-limited mobility is demonstrated. Model calculation of the two-dimensional electron mobility in an alloy-scattering-free InAs/GaAs monolayer superlattice with AlInAs as the barrier is also presented.