The integrated Emitter Turn-off Thyristor (IETO) - an innovative thyristor based high power semiconductor device using MOS assisted turn-off
The integrated Emitter Turn-off Thyristor (IETO) - an innovative thyristor based high power semiconductor device using MOS assisted turn-off
复制标题
集成发射极可关断晶闸管 (IETO) - 一种基于晶闸管的创新型高功率半导体器件，采用 MOS 辅助关断
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
R. D. De Doncker
中科院分区：
文献类型：
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作者：
M. Bragard;M. Conrad;R. D. De Doncker
本文研究了一种新的发射极关断晶闸管（ETO）实现方法。栅极整流晶闸管（GCT）的单位增益关断能力要求极低的栅极通道内寄生元件。ETO的概念假定在晶闸管的阴极电流通路上有一个MOSFET，这引起了几个问题。提出了一种新的方法，可以实现更小、更简单的驱动器设计。通过将mosfet集成到压包中，消除了已知发射极关断晶闸管（ETO）的缺点。
This paper focuses on a new realization method of an Emitter Turn-off Thyristor (ETO). The unity gain turn-off capability of the Gate Commutated Thyristor (GCT) requires extremely low parasitic components within the gate path. The concept of the ETO postulates a MOSFET in the cathode current path of the thyristor, which causes several problems. A new approach leading to a significant smaller and less complex driver design is presented. The drawbacks of the known Emitter Turn-Off Thyristor (ETO) are eliminated by the integration of the MOSFETs into the press pack.