High-density plasma-induced etch damage of InGaN/GaN multiple quantum well light-emitting diodes
High-density plasma-induced etch damage of InGaN/GaN multiple quantum well light-emitting diodes
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DOI：
10.1063/1.1491585
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发表时间：
2002-08-01
影响因子：
3.2
通讯作者：
Lee, HJ
中科院分区：
文献类型：
--
作者：
Hahn, YB;Choi, RJ;Lee, HJ
研究了InGaN/GaN多量子阱（MQW）发光二极管（LED）的等离子体损伤，包括正向开启电压、反向击穿电压、刻蚀速率和表面形貌。由于离子散射的增加，导致n-GaN侧壁沿着的物理退化，导致正向和反向电压的恶化。正向导通电压是相对独立的压力高达20毫托。反向击穿电压表现出最严重的退化在75%Cl-2，主要是因为侧壁污染。结果表明，n-GaN的开启电压对刻蚀后的表面粗糙度很敏感，而击穿电压受侧壁污染的影响很大。在梅萨蚀刻之后在氮气下退火改善了InGaN/GaN多量子阱LED的电学性质。(C)2002年美国物理学会。
Plasma-induced damage of InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) has been studied in terms of forward turn-on and reverse breakdown voltages, together with etch rate and surface morphology. The physical degradation of sidewall along with rough surface morphology of n-GaN caused by increased ion scattering induced the deterioration of the forward and reverse voltages. The forward turn-on voltage was relatively independent of the pressure up to 20 mTorr. The reverse breakdown voltage showed the worst degradation at 75% Cl-2 mainly because of a sidewall contamination. It was found that the turn-on voltage is sensitive to the surface roughness of the etched n-GaN and the breakdown voltage is strongly affected by the sidewall contamination. Annealing under nitrogen after the mesa etching improved the electrical properties of the InGaN/GaN MQW LEDs. (C) 2002 American Institute of Physics.