A Ku-band series/shunt switching type S/H IC for direct RF under sampling reception
A Ku-band series/shunt switching type S/H IC for direct RF under sampling reception
复制标题
用于直接射频采样接收的 Ku 波段串联/并联切换型 S/H IC
DOI：
10.1109/eumc.2015.7345909
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
K. Tsubouchi
中科院分区：
文献类型：
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作者：
T. Koizumi;M. Motoyoshi;Daliso Banda;Osamu Wada;S. Kameda;N. Suematsu;T. Takagi;K. Tsubouchi
为了减小接收机的尺寸和功耗，已经开发了直接RF采样接收。这种接收方法适用于卫星通信接收机，因为它对远近电阻和杂散响应的要求可以从地面无线接收机放宽。在本文中，我们提出并证明了一个Ku波段的串联/并联开关型采样和保持（S/H）集成电路的甚小口径终端（VSAT）的射频下采样接收机。即使在高频范围内，串联/并联配置也能在保持期间实现低RF信号泄漏到S/H输出。为了减小开关管输入级的损耗，在并联开关管上并联谐振电感，在射频输入端采用片上匹配电路。所提出的S/H电路的设计和制造在90 nm CMOS工艺。制造的IC执行|S11|在VSAT的Ku波段（12.2-12.75GHz），信噪比（SNR）低于-19dB和34.9dB。
To reduce the size and the power consumption of receivers, direct RF under sampling reception has been developed. This reception method is applicable for satellite communication receivers, because the requirements of near-far resistance and spurious response can be relaxed from that of terrestrial wireless receivers. In this paper, we propose and demonstrate a Ku-band series/shunt switching type sample and hold (S/H) IC for very small aperture terminal (VSAT) RF under sampling receivers. The series/shunt configuration enables low RF signal leakage to the S/H output during hold period even in the high frequency range. To reduce to the loss of input stage of the S/H IC, parallel resonant inductor is attached to the shunt switch FET and on-chip matching circuit is employed for RF input port. The proposed S/H circuit is designed and fabricated in 90 nm CMOS process. The fabricated IC performs the |S11| of lower than −19dB and the signal-to-noise ratio (SNR) of higher than 34.9 dB at VSAT's Ku-band (12.2–12.75GHz).