Characteristics of N-Face InGaN Light-Emitting Diodes With p-Type InGaN/GaN Superlattice
Characteristics of N-Face InGaN Light-Emitting Diodes With p-Type InGaN/GaN Superlattice
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DOI：
10.1109/lpt.2013.2285372
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发表时间：
2013-10
影响因子：
2.6
通讯作者：
Guofeng Yang;Guohua Li;Shumei Gao;D. Yan;Fuxue Wang
中科院分区：
文献类型：
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作者：
Guofeng Yang;Guohua Li;Shumei Gao;D. Yan;Fuxue Wang
对p型InGaN/GaN超晶格（SL）的N面蓝光InGaN/GaN发光二极管（LED）进行了数值模拟，并对相同结构的Ga面LED进行了模拟比较。当外加电压超过一定值时，所提出的p-InGaN/GaN SL N面LED的光输出功率和载流子注入效率比p-InGaN/GaN SL Ga面LED有显著提高。通过模拟量子威尔斯中的能带图、电场分布、载流子浓度和辐射复合率解释了N面LED的增强性能。
The N-face blue InGaN/GaN light-emitting diodes (LEDs) with specific design of p-type InGaN/GaN superlattice (SL) are investigated numerically, and the Ga-face LED with the same structure is simultaneously simulated for comparison. The proposed N-face LED with p-InGaN/GaN SL exhibits significant improvement for the light output power and carrier injection efficiency when the applied voltage surpasses certain value compared with the Ga-face LED with p-InGaN/GaN SL. The enhanced performance for N-face LED is explained by the simulated energy band diagrams, distribution of electric field, carrier concentration, and radiative recombination rate in the quantum wells.