GAP AT THE FERMI LEVEL AND MAGNETISM IN RMSN TERNARY COMPOUNDS (R = TI, ZR, HF AND M + FE, CO, NI)

GAP AT THE FERMI LEVEL AND MAGNETISM IN RMSN TERNARY COMPOUNDS (R = TI, ZR, HF AND M + FE, CO, NI)
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DOI:
10.1016/0304-8853(92)91629-8
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发表时间:
1992-02-01
影响因子:
2.7
通讯作者:
DOSSMANN, Y
DOSSMANN, Y
中科院分区:
材料科学3区
文献类型:
--
作者:
KUENTZLER, R;CLAD, R;DOSSMANN, Y

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我们表明,具有 MgAgAs 型结构的 RMSn 化合物具有较低的伽马值,这与 E(F) 处存在间隙一致。 当 M = Co 时观察到较高的值,特别是对于铁磁体 TiCoSn。 金属多数自旋能带和半导体少数自旋能带同时存在,解释了磁有序性。
We show that RMSn compounds with MgAgAs-type structure have low gamma values in agreement with the existence of a gap at E(F). Higher values are observed for M = Co in particular for TiCoSn which is a ferromagnet. A metallic majority-spin band and semiconduction minority-spin band are existing simultaneously explaining the magnetic ordering.