Avalanche noise characteristics in submicron InP diodes
Avalanche noise characteristics in submicron InP diodes
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DOI：
10.1109/jqe.2007.914771
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发表时间：
2008-03-01
影响因子：
2.5
通讯作者：
David, J. P. R.
中科院分区：
文献类型：
--
作者：
Tan, L. J. J.;Ng, J. S.;David, J. P. R.
我们报告了在一系列具有不同雪崩区厚度的InP二极管上测量的过量噪声因子，覆盖了从180到850 kV/cm的宽电场范围。在雪崩区厚度较薄的二极管中，死区的重要性增加，从而降低了过量噪声。在倍增因子M = 10时，测量到F = 3.5的过量噪声因子，这是迄今为止报道的InP的最低值。采用非局域模型计算了InP中的碰撞电离系数和阈值能量随电场的变化关系，并考虑了死腔效应。这项工作表明，进一步优化的InP分离吸收倍增雪崩光电二极管（SAM APD）可能会导致与InAlAs SAM APD的噪声性能相当。
We report excess noise factors measured on a series of InP diodes with varying avalanche region thickness, covering a wide electric field range from 180 to 850kV/cm. The increased significance of dead space in diodes with thin avalanche region thickness decreases the excess noise. An excess noise factor of F = 3.5 at multiplication factor M = 10 was measured, the lowest value reported so far for InP. The electric field dependence of impact ionization coefficients and threshold energies in InP have been determined using a non-local model to take into account the dead space effects. This work suggests that further optimization of InP separate absorption multiplication avalanche photodiodes (SAM APDs) could result in a noise performance comparable to InAlAs SAM APDs.