Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications
Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications
复制标题
DOI：
10.1007/s11664-006-0138-5
复制
发表时间：
2006-04
影响因子：
2.1
通讯作者：
S. Hullavarad;R. Vispute;B. Nagaraj;V. N. Kulkarni;S. Dhar;T. Venkatesan;K. Jones;M. Derenge;T. Zheleva;M. Ervin;A. Lelis;C. Scozzie;D. Habersat;A. Wickenden;L. Currano;M. Dubey
中科院分区：
文献类型：
--
作者：
S. Hullavarad;R. Vispute;B. Nagaraj;V. N. Kulkarni;S. Dhar;T. Venkatesan;K. Jones;M. Derenge;T. Zheleva;M. Ervin;A. Lelis;C. Scozzie;D. Habersat;A. Wickenden;L. Currano;M. Dubey
在本文中，我们报告了脉冲激光沉积 AIN 薄膜在 SiC 高温覆盖、SiC 基器件钝化以及 Pt 金属化 SiO2/Si 上压电 MEMS/NEMS 谐振器制造方面的最新进展。使用反应激光烧蚀技术生长的 AlN 薄膜具有高化学计量性、致密性，光学带隙为 6.2 eV，表面光滑度小于 1 nm。采用低温缓冲层方法来减少晶格和热失配应变。讨论了 AlN 薄膜质量的依赖性及其作为加工参数函数的特性。由于高结晶度、近乎完美的化学计量和高堆积密度，脉冲激光沉积的 AlN 薄膜表现出耐受高达 1600°C 高温的趋势，这使其能够用作 SiC 晶圆的退火覆盖层，以消除离子注入损伤和掺杂剂激活。激光沉积的 AlN 薄膜在 SiC 基器件上表现出保形覆盖，并且当用作 Ni/AlN/SiC 金属-绝缘体-半导体 (MIS) 器件中的绝缘体时，在高达 350°C 的温度下表现出 1.66 MV/cm 的电击穿强度。在用于射频微电子和机械系统以及纳米电子和机械系统（MEMS 和 NEMS）的 Pt/SiO2/Si (100) 基板上生长的脉冲激光沉积 (PLD) AlN 薄膜展示了谐振器在 2.5–0.45 MHz 频率范围内具有 8,000 至 17,000 的高 Q 值。 AlN 薄膜通过 X 射线衍射、卢瑟福背散射光谱法（正常模式和氧共振模式）、原子力显微镜、紫外 (UV)-可见光谱和扫描电子显微镜进行表征。利用脉冲激光沉积薄膜的高带隙、高结合强度、优异的压电特性、极高的化学惰性、高电阻率、高击穿强度和高热稳定性等特性的应用已经在 SiC 功率器件、高温电子和射频 (RF) MEMS 的新兴发展背景下进行了讨论。
In this paper we report recent advances in pulsed-laser-deposited AIN thin films for high-temperature capping of SiC, passivation of SiC-based devices, and fabrication of a piezoelectric MEMS/NEMS resonator on Pt-metallized SiO2/Si. The AlN films grown using the reactive laser ablation technique were found to be highly stoichiometric, dense with an optical band gap of 6.2 eV, and with a surface smoothness of less than 1 nm. A low-temperature buffer-layer approach was used to reduce the lattice and thermal mismatch strains. The dependence of the quality of AlN thin films and its characteristics as a function of processing parameters are discussed. Due to high crystallinity, near-perfect stoichiometry, and high packing density, pulsed-laser-deposited AlN thin films show a tendency to withstand high temperatures up to 1600°C, and which enables it to be used as an anneal capping layer for SiC wafers for removing ion-implantation damage and dopant activation. The laser-deposited AlN thin films show conformal coverage on SiC-based devices and exhibit an electrical break-down strength of 1.66 MV/cm up to 350°C when used as an insulator in Ni/AlN/SiC metal-insulator-semiconductor (MIS) devices. Pulsed laser deposition (PLD) AlN films grown on Pt/SiO2/Si (100) substrates for radio-frequency microelectrical and mechanical systems and nanoelectrical and mechanical systems (MEMS and NEMS) demonstrated resonators having high Q values ranging from 8,000 to 17,000 in the frequency range of 2.5–0.45 MHz. AlN thin films were characterized by x-ray diffraction, Rutherford backscattering spectrometry (in normal and oxygen resonance mode), atomic force microscopy, ultraviolet (UV)-visible spectroscopy, and scanning electron microscopy. Applications exploiting characteristics of high bandgap, high bond strength, excellent piezoelectric characteristics, extremely high chemical inertness, high electrical resistivity, high breakdown strength, and high thermal stability of the pulsed-laser-deposited thin films have been discussed in the context of emerging developments of SiC power devices, for high-temperature electronics, and for radio frequency (RF) MEMS.