SURFACE PROTECTION AND SELECTIVE MASKING DURING DIFFUSION IN SILICON
SURFACE PROTECTION AND SELECTIVE MASKING DURING DIFFUSION IN SILICON
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DOI：
10.1149/1.2428650
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发表时间：
1957-01-01
影响因子：
3.9
通讯作者：
DERICK, L
中科院分区：
文献类型：
--
作者：
FROSCH, CJ;DERICK, L
描述了一种在大气压下供体和受体的气固扩散到硅中的装置。它主要由一个熔融石英管延伸通过一个或多个受控温度区域。一种气体，如氮气，携带来自被加热的杂质元素或其化合物之一的蒸气通过被加热的硅。在温度超过1000℃时，氦气或氮气等气体会对硅表面造成严重的点蚀或侵蚀。在高温加热操作过程中，一层薄薄的玻璃状二氧化硅外壳包裹着硅，可以完全保护底层表面不受损坏。描述了获得表面钝化的方法。除了表面保护外，二氧化硅表面层还显示出提供选择性掩膜。防止一些供体和受体在高温下扩散到硅中。数据显示了二氧化硅层对几个供体和受体扩散到硅中的掩蔽效果。描述了掩模技术在产生n型和p型精确表面图案中的应用。双扩散晶体管的构造说明了它在器件方面的可行性。这种晶体管的独特之处在于发射极和基极触点都是在相邻区域的表面上制造的。
An apparatus is described for t] he vapor-solid diffusion of donors and acceptors into silicon at atmospheric: pressure. It consists essentially of a fused silica tube extending through one or more controlled temperature zones. A gas such as nitrogen carries the vapors from the heated impurity element or one of its compounds past the heated silicon. At temperatures above about 1000~ gases such as helium or nitrogen are shown to cause serious pitting or erosion of the silicon surfaces. A thin vitreous silicon dioxide envelope enclosing the silicon during the high temperature heating operation is shown to provide complete protection of the underlying surface against damage. Methods of obtaining surface passivation are described. In addition to surface protection, a silicon dioxide surface layer also is shown to provide a selective mask'. against the diffusion into silicon of some donors and acceptors at elevated temperatures. Data are presented showing the masking effectiveness of the silicon dioxide layer against the diffusion of several donors and acceptors into silicon. The application of the masking tec] hnique to produce precise surface patterns of both n-and p-type is described. An example of its feasibility in device considerations is illustrated by the construction of a transistor by double diffusion. This transistor is unique in that both the emitter and base contacts are made at the surface in adjacent areas.