Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity
Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity
复制标题
InGaN/GaN量子阱表面等离子体耦合效应机制：光致发光强度的增强和抑制
作者：
Liu, Zhenghui;Cao, Bing;Wang, Jianfeng;Xu, Ke;Zhang, Guiju;Han, Qin;Huang, Zengli;Wang, Chinhua;Yang, Hui
