Microscopic structure and multiple charge states of a PtH2 complex in Si.
Microscopic structure and multiple charge states of a PtH2 complex in Si.
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Si 中 PtH2 配合物的微观结构和多种电荷态。
DOI：
10.1103/physrevb.51.9612
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
Watkins
中科院分区：
文献类型：
--
作者：
Uftring;Stavola;Williams;Watkins
用振动波谱和电子顺磁共振（EPR）研究了硅中PtH - 2配合物的结构和电学性质。PtH - 2配合物在Si带隙中引入了两个能级。先前确定的一个水平位于E -0.1 eV附近。由PtH 2引入的第二个新发现的水平估计位于中间间隙附近。给出了PtH 2的三个电荷态的氢振动。电子顺磁共振为顺磁电荷状态提供了详细的结构信息，并提出了偏离中心Pt−的结构，其< 001>畸变被一对氢原子加强。对氢超精细相互作用的小各向异性部分的分析表明，Pt-H距离为r 4.2 Å，有助于确定配合物中H原子的位置。
The structure and electrical properties of a PtH 2 complex in Si have been studied by vibrational spectroscopy and electron paramagnetic resonance (EPR). The PtH 2 complex has been found to introduce two levels in the Si band gap. One level was identified previously and lies near E c-0.1 eV. A second, newly discovered level introduced by PtH 2 is estimated to lie near midgap. The hydrogen vibrations of the three charge states of PtH 2 have been assigned. Electron paramagnetic resonance provides detailed structural information for the paramagnetic charge state and suggests a structure with an off-center Pt− whose< 001> distortion is reinforced by the pair of hydrogen atoms. An analysis of the small anisotropic part of the hydrogen hyperfine interaction suggests a Pt-H distance of r≊ 4.2 Å and helps to locate the positions of the H atoms in the complex.