Defect State Assisted Z-scheme Charge Recombination in Bi2O2CO3/Graphene Quantum Dot Composites For Photocatalytic Oxidation of NO
Defect State Assisted Z-scheme Charge Recombination in Bi2O2CO3/Graphene Quantum Dot Composites For Photocatalytic Oxidation of NO
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DOI：
10.1021/acsanm.9b02276
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发表时间：
2020-01
期刊：
影响因子：
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通讯作者：
Yang Liu;Ying Zhou;Shan Yu;Zhanghui Xie;Yi Chen;Kaiwen Zheng;S. Mossin;Wei Lin;J. Meng
中科院分区：
文献类型：
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作者：
Yang Liu;Ying Zhou;Shan Yu;Zhanghui Xie;Yi Chen;Kaiwen Zheng;S. Mossin;Wei Lin;J. Meng
在这项工作中，我们探讨了光生载流子动力学合理化的光催化氧化NO在N-掺杂Bi 2 O2 CO 3/石墨烯量子点复合材料（N-BOC/GQD）通过时间分辨光致发光（TRPL）。在可见光照射下，只有GQD可以被光激发并在0.5ns内将电子注入N-BOC。在紫外光照射下，N-BOC中的电子和GQD中的空穴之间的界面Z-模式异质结复合在0.36 ns内控制了激发态的减少。这种有效的Z-计划重组，无论大的能量差（1.66 eV）介导的界面氧空位缺陷状态，其特征在于密度泛函理论计算（DFT）和电子顺磁共振（EPR）测量。这一发现为通过界面工程改善纳米复合材料的光催化性能提供了新的战略视角
In this work, we explored the photoinduced charge carriers dynamics rationalizing the photocatalytic oxidation of NO over N-doped Bi2O2CO3/graphene quantum dots composites(N-BOC/GQDs) via time-resolved photoluminescence (TRPL). Under visible light illumination, only GQDs can be photoexcited and inject electrons to N-BOC within 0.5 ns. Under UV light irradiation, the interfacial Z-scheme heterojunction recombination between the electrons in N-BOC and holes in GQDs dominate the depopulation of excited states within 0.36 ns. Such efficient Z-scheme recombination regardless of the large energy difference (1.66 eV) is mediated by the interfacial oxygen vacany defect states characterized by both density functional theory calculations (DFT) and electron paramagnetic resonance (EPR) measurement. This finding provide a novel strategic view to improve the photocatalytic performance of the nanocomposite by interfacial engineering