Glycothermal Synthesis of ZnGa2O4 : Mn2 + Nanophosphor and Change in Its Photoluminescence Intensity by Heat-Treatment
Glycothermal Synthesis of ZnGa2O4 : Mn2 + Nanophosphor and Change in Its Photoluminescence Intensity by Heat-Treatment
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DOI：
10.1149/1.2437067
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发表时间：
2007-04
影响因子：
3.9
通讯作者：
Masahiro Takesada;T. Isobe;Hisamitsu Takahashi;S. Itoh
中科院分区：
文献类型：
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作者：
Masahiro Takesada;T. Isobe;Hisamitsu Takahashi;S. Itoh
以二水合乙酸锌、乙酰丙酮镓和四水合乙酸锰为原料，在1，4-丁二醇中，采用糖热法在300°C反应2 h合成了ZnGa 2 O 4：Mn 2+纳米荧光粉。其平均粒径为12.1 ± 2.5nm。我们研究了Ar气中后热处理温度对发光和结构性质的影响。在低于900°C加热后，光致发光（PL）强度略有下降。PL强度在900 ~ 1200°C之间增加，在1200°C时达到最大值，超过1200°C时降低。通过加热至900°C以下的PL强度的降低通过吸附的有机物质的去除而发生。X射线衍射分析表明，当温度超过1200°C时，ZnGa 2 O 4分解为Ga 2 O3和ZnO，导致发光强度下降。由于顺磁性Mn 2+的电子顺磁共振积分强度随Ar中热处理温度的变化与PL强度的变化相似。这表明，PL强度与掺入的Mn 2+量相关。
ZnGa 2 O 4 :Mn 2+ nanophosphors were synthesized from zinc acetate dihydrate, gallium acetylacetonate, and manganese(II) acetate tetrahydrate in 1,4-butanediol by glycothermal method at 300°C for 2 h. Their average particle diameter was 12.1 ± 2.5 nm. We investigated the influence of temperatures of postheat-treatment in Ar on the luminescent and structural properties. The photoluminescence (PL) intensity slightly decreased after heating below 900°C. The PL intensity increased between 900 and 1200°C, reached at the maximum at 1200°C and decreased over 1200°C. The decrease of the PL intensity by heating below 900°C occurred by the removal of adsorbed organic species. The X-ray diffraction profile indicated the decomposition of ZnGa 2 O 4 to Ga 2 O 3 and ZnO by heating over 1200°C, resulting in the decrease of the PL intensity. The change in the integrated intensity of electron paramagnetic resonance due to paramagnetic Mn 2+ with the temperature of heat-treatment in Ar was similar to that of the PL intensity. This suggests that the PL intensity is correlated to the incorporated Mn 2+ amount.