Effects of interdiffusion on the band alignment of GeSi dots
Effects of interdiffusion on the band alignment of GeSi dots
复制标题
DOI：
10.1063/1.1405152
复制
发表时间：
2001-09
影响因子：
4
通讯作者：
J. Wan;Y. Luo;Zuimin Jiang;G. Jin;Jianlin Liu;Kang L. Wang;X. Liao;J. Zou
中科院分区：
文献类型：
--
作者：
J. Wan;Y. Luo;Zuimin Jiang;G. Jin;Jianlin Liu;Kang L. Wang;X. Liao;J. Zou
通过温度和激发功率相关的光致发光测量研究了互扩散对镶嵌在Si基体中的GeSi点能带排列的影响。一个不同的功率依赖性行为的光致发光的生长和退火样品进行了观察。结果表明，退火后，由于Ge/Si的相互扩散，量子点的能带排列由II型变为I型。从温度依赖的光致发光测量中观察到价带偏移的减少，这也是由Ge/Si相互扩散引起的。
The interdiffusion effects on the band alignment of the GeSi dots embedded in Si matrix were studied by temperature- and excitation-power-dependent photoluminescence measurements. A different power-dependent behavior of the photoluminescence for the as-grown and the annealed samples was observed. It was suggested that the band alignments of the dots changed from type II to type I after annealing due to the Ge/Si interdiffusion. The decrease of the valence band offset, which was also induced by the Ge/Si interdiffusion, was observed from the temperature-dependent photoluminescence measurements.