Optimization and Evaluation of Sputtering Barrier/Seed Layer in Through Silicon Via for 3-D Integration
Optimization and Evaluation of Sputtering Barrier/Seed Layer in Through Silicon Via for 3-D Integration
复制标题
用于 3D 集成的硅通孔溅射阻挡层/种子层的优化和评估
DOI：
10.1109/tst.2014.6787368
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发表时间：
2014-04-01
影响因子：
6.6
通讯作者：
Wu, Zijian
中科院分区：
文献类型：
--
作者：
Wei, Tiwei;Cai, Jian;Wu, Zijian
屏障/种子层是硅通孔（TSV）三维集成技术中的一个关键问题。溅射是半导体工艺中通孔金属化的一种重要沉积方法。然而，由于溅射的限制和孔道内部的“扇贝”形轮廓，在金属化过程中，屏障/种子层的台阶覆盖率很差。本文研究了几种溅射参数（直流功率、氩气压力、沉积时间和衬底温度）对TSV应用中薄膜覆盖的影响。在优化磁控溅射参数的条件下，获得了宽高比为5:1的鲁棒tsv。此外，还比较了不同溅射参数对溅射性能的影响，得出的结论可作为选择合适的溅射参数集的指导。
The barrier/seed layer is a key issue in Through Silicon Via (TSV) technology for 3-D integration. Sputtering is an important deposition method for via metallization in semiconductor process. However, due to the limitation of sputtering and a "scallop" profile inside vias, poor step coverage of the barrier/seed layer always occurs in the via metallization process. In this paper, the effects of several sputter parameters (DC power, Ar pressure, deposition time, and substrate temperature) on thin film coverage for TSV applications are investigated. Robust TSVs with aspect ratio 5 : 1 were obtained with optimized magnetron sputter parameters. In addition, the influences of different sputter parameters are compared and the conclusion could be used as a guideline to select appropriate parameter sets.