Single-event upset and snapback in silicon-on-insulator devices and integrated circuits
Single-event upset and snapback in silicon-on-insulator devices and integrated circuits
复制标题
绝缘体上硅器件和集成电路中的单粒子翻转和骤回
DOI：
10.1109/23.903749
复制
发表时间：
2000
影响因子：
1.8
通讯作者：
P. Winokur
中科院分区：
文献类型：
--
作者：
P. Dodd;M. Shaneyfelt;D. Walsh;J. Schwank;G. L. Hash;R. A. Loemker;B. Draper;P. Winokur
研究了不同体结结构的绝缘体上硅（SOI）晶体管和电路的离子感生电荷收集和单粒子翻转特性。碰撞电离效应，包括单粒子骤回，是非常重要的。聚焦离子微束实验被用来寻找单粒子骤回漏极电压阈值在n沟道SOI晶体管作为器件宽度的函数。三维器件模拟用于确定SOI SRAM的单粒子翻转和骤回阈值，并研究各种体结结构的设计权衡。一个窗口的脆弱性，单事件的snapback显示存在低于单事件的颠覆阈值。通过宽束离子测试证实了商用SOI SRAM中单粒子骤回的存在，并讨论了SOI集成电路硬度保证测试的意义。
The characteristics of ion-induced charge collection and single-event upset are studied in silicon-on-insulator (SOI) transistors and circuits with various body tie structures. Impact ionization effects, including single-event snapback, are shown to be very important. Focused ion microbeam experiments are used to find single-event snapback drain voltage thresholds in n-channel SOI transistors as a function of device width. Three-dimensional device simulations are used to determine single-event upset and snapback thresholds in SOI SRAMs, and to study design tradeoffs for various body-tie structures. A window of vulnerability to single-event snapback is shown to exist below the single-event upset threshold. The presence of single-event snapback in commercial SOI SRAMs is confirmed through broadbeam ion testing, and implications for hardness assurance testing of SOI integrated circuits are discussed.