Controlled selective growth of ZnO nanorod arrays and their field emission properties
Controlled selective growth of ZnO nanorod arrays and their field emission properties
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DOI：
10.1088/0957-4484/18/48/485307
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发表时间：
2007-12-05
期刊：
影响因子：
3.5
通讯作者：
Hahn, Yoon-Bong
中科院分区：
文献类型：
--
作者：
Ahsanulhaq, Q.;Kim, Jin-Hwan;Hahn, Yoon-Bong
通过结合电子束光刻和简单的溶液生长技术，在硅衬底上制备了具有类似于30：1的高纵横比和类似于50 nm的直径的可控有序ZnO纳米棒阵列。这种自上而下和自下而上的混合方法导致了对硅衬底上ZnO纳米棒阵列的周期性、位置和密度的良好控制。从生长的ZnO纳米棒阵列的场发射测量显示出类似于2.85 V μ m（-1）的低开启场和类似于1.68 × 10（3）的高场增强因子（β）。
Controlled, ordered arrays of ZnO nanorods having a high aspect ratio of similar to 30: 1 and diameter of similar to 50 nm were fabricated on silicon substrates by combining electron-beam lithography and simple solution growth techniques. This top-down and bottom-up hybrid approach resulted in excellent control of periodicity, location, and density of ZnO nanorod arrays on silicon substrates. The field emission measurements from the as-grown ZnO nanorod arrays showed a low turn-on field of similar to 2.85 V mu m(-1) and a high field-enhancement factor (beta) of similar to 1.68 x 10(3).