An Integrated Reconfigurable Spin Control System on 180 nm CMOS for Diamond NV Centers

An Integrated Reconfigurable Spin Control System on 180 nm CMOS for Diamond NV Centers
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DOI:
10.1109/tmtt.2023.3254600
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发表时间:
2023-09
影响因子:
4.3
通讯作者:
Kaisarbek Omirzakhov;M. H. Idjadi;Tzu-Yung Huang;S. Breitweiser;David A. Hopper;L. Bassett;F. Aflatouni
Kaisarbek Omirzakhov;M. H. Idjadi;Tzu-Yung Huang;S. Breitweiser;David A. Hopper;L. Bassett;F. Aflatouni
中科院分区:
工程技术1区
文献类型:
--
作者:
Kaisarbek Omirzakhov;M. H. Idjadi;Tzu-Yung Huang;S. Breitweiser;David A. Hopper;L. Bassett;F. Aflatouni

文献摘要

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固态电子自旋是量子信息科学新兴应用的关键构建块,包括量子计算机、量子通信链路和量子传感器。这些固态自旋主要使用复杂的微波脉冲序列进行控制,这些脉冲序列通常使用台式电子仪器产生。所需电子设备的集成将使可扩展、低功率和紧凑的光学可寻址量子系统得以实现。在这里,我们报道了一个集成的可重构量子控制系统,该系统用于寻找电子自旋共振(ESR)频率,并对钻石中的氮空位(NV)中心自旋量子比特进行Rabi、Ramsey和Hahn-ECHO测量。该芯片可以编程合成从1.6 GHz到2.6 GHz可调的RF信号,该信号由多达4098个可重构脉冲序列调制,脉冲宽度和脉冲间延迟分别在10 ns到42 ms和18 ns到42 ms之间可调,分辨率为2.5 ns。这款180 nm的芯片面积为3.02 mm2,功耗为80 mW。
Solid-state electron spins are key building blocks for emerging applications in quantum information science, including quantum computers, quantum communication links, and quantum sensors. These solid-state spins are mainly controlled using complex microwave pulse sequences, which are typically generated using benchtop electrical instruments. Integration of the required electronics will enable realization of a scalable low-power and compact optically addressable quantum system. Here, we report an integrated reconfigurable quantum control system, which is used to find electron-spin resonance (ESR) frequency and perform Rabi, Ramsey, and Hahn-echo measurements for a nitrogen-vacancy (NV) center spin qubit in diamond. The chip can be programmed to synthesize an RF signal tunable from 1.6 to 2.6 GHz, which is modulated with a sequence of up to 4098 reconfigurable pulses with a pulse width and pulse-to-pulse delay adjustable from 10 ns to 42 ms and 18 ns to 42 ms, respectively, at a resolution of 2.5 ns. The 180-nm CMOS chip is fabricated within a footprint of 3.02 mm2 and has a power consumption of 80 mW.