Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films
Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films
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DOI：
10.1088/0953-8984/24/43/435803
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发表时间：
2012-10-31
影响因子：
2.7
通讯作者：
Wu, H. Z.
中科院分区：
文献类型：
--
作者：
Jayasinghe, R. C.;Lao, Y. F.;Wu, H. Z.
在25-300K温度范围内，利用红外吸收光谱和反射光谱和透射谱研究了不同掺杂浓度的p型InP外延薄膜的光学性质。在2-35微米的光谱范围内，利用包括价带跃迁、自由载流子和晶格吸收的全介电函数(DF)模型精确地确定了光学常数。在抛物线能带近似下，用DF模型研究了自由空穴在分裂带、轻空穴和重空穴之间的IVB跃迁。对IVB跃迁和吸收系数的了解有助于设计高工作温度和高探测率的红外探测器和其他光电子器件。此外，文中给出的折射率值对半导体量子级联激光器中实现p-InP光波导等光电子器件的设计具有一定的参考价值。文中还报道了空穴有效质量和等离子体频率与温度的关系。
The optical properties of p-type InP epitaxial films with different doping concentrations are investigated by infrared absorption measurements accompanied by reflection and transmission spectra taken from 25 to 300 K. A complete dielectric function (DF) model, including intervalence band (IVB) transitions, free-carrier and lattice absorption, is used to determine the optical constants with improved accuracy in the spectral range from 2 to 35 mu m. The IVB transitions by free holes among the split-off, light-hole, and heavy-hole bands are studied using the DF model under the parabolic-band approximation. A good understanding of IVB transitions and the absorption coefficient is useful for designing high operating temperature and high detectivity infrared detectors and other optoelectronic devices. In addition, refractive index values reported here are useful for optoelectronic device designing, such as implementing p-InP waveguides in semiconductor quantum cascade lasers. The temperature dependence of hole effective mass and plasma frequency is also reported.