Growth modes in atomic hydrogen‐assisted molecular beam epitaxy of GaAs
Growth modes in atomic hydrogen‐assisted molecular beam epitaxy of GaAs
复制标题
GaAs 原子氢辅助分子束外延的生长模式
DOI：
10.1063/1.115200
复制
发表时间：
1995
影响因子：
4
通讯作者：
M. Kawabe
中科院分区：
文献类型：
--
作者：
Y. Okada;T. Fujita;M. Kawabe
已经表明，在分子束外延（MBE）中GaAs生长期间用原子氢辐照促进了GaAs（001）衬底上理想的逐层二维成核和阶梯流动生长模式，从而导致原子平坦的表面。基于反射高能电子衍射（RHEED）和原子力显微镜（AFM）测量，已经提出了与基本过程相关的基本重要观测。提出了原子氢辅助GaAs分子束外延的生长模型。
It has been shown that irradiation with atomic hydrogen during the growth of GaAs in molecular beam epitaxy (MBE) promotes an ideal layer‐by‐layer two‐dimensional nucleation and step‐flow growth mode on GaAs(001) substrates, thereby resulting in atomically flat surfaces. Fundamentally important observations related to elementary processes have been presented based on the reflection high‐energy electron diffraction (RHEED) and atomic force microscopy (AFM) measurements. A growth model for the atomic hydrogen‐assisted GaAs MBE has been postulated.