Comparison of Brightness of Emitting Semiconductor Nanocrystals with That of Rare-Earth Phosphor
Comparison of Brightness of Emitting Semiconductor Nanocrystals with That of Rare-Earth Phosphor
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发光半导体纳米晶与稀土荧光粉的亮度比较
DOI：
10.1143/jjap.46.7545
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发表时间：
2007
影响因子：
1.5
通讯作者：
M. Ando
中科院分区：
文献类型：
--
作者：
N. Murase;Chunliang Li;Ping Yang;M. Ando
开发了一种方法来比较新开发的薄膜的亮度与分散的光致发光CdTe半导体纳米晶体（NC）在最终的高浓度（约。0.01 M）与典型的商业稀土磷光体（Y2O2S：Eu）的荧光强度。我们发现在相同的样品厚度、激发强度和波长条件下比较它们的亮度是合理的。在弱激发极限下，新薄膜的亮度大约高出30倍。这种更高的亮度是由于NC的更高的浓度和发射效率，以及每单位体积的NC的更大的吸收截面。亮度的差异随着激发强度的增加而增加，因为稀土磷光体由于其长的发射衰减时间而表现出强烈的饱和现象。由于这些薄膜可以被紫外蓝光二极管有效地激发，其功率正在稳步增加，因此它们将在未来变得更加适用。
A method was developed to compare the brightness of newly developed thin films with dispersed photoluminescent CdTe semiconductor nanocrystals (NCs) at an ultimately high concentration (ca. 0.01 M) with that of a typical commercial rare-earth phosphor (Y2O2S:Eu). We have found it is reasonable to compare their brightness under conditions of the same sample thickness, excitation intensity, and wavelength. At the weak-excitation limit, the brightness of the new films was about 30 times higher. This higher brightness is due to the higher concentration and emission efficiency of NCs, and the larger absorption cross section per unit volume of NCs. The difference in the brightness increases with the excitation intensity because rare-earth phosphors exhibit a strong saturation phenomenon due to their long emission decay time. Because these films are efficiently excited by UV–blue diodes, the power of which is steadily increasing, they will become more applicable in future.
影响因子：
3.7
作者：
Ito, Yuichi;Matsuda, Kazunari;Kanemitsu, Yoshihiko
通讯作者：
Kanemitsu, Yoshihiko
影响因子：
8.6
作者：
Yu, WW;Qu, LH;Peng, XG
通讯作者：
Peng, XG