High responsivity GaN nanowire UVA photodetector synthesized by hydride vapor phase epitaxy
High responsivity GaN nanowire UVA photodetector synthesized by hydride vapor phase epitaxy
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DOI：
10.1063/5.0024126
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发表时间：
2020-10
影响因子：
3.2
通讯作者：
Shuo Zhang;Xinran Zhang;F. Ren;Yue Yin;T. Feng;W. Song;Guodong Wang;M. Liang;Jianlong Xu;Jianwei Wang;Junxi Wang;Jinmin Li;X. Yi;Zhiqiang Liu
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文献类型：
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作者：
Shuo Zhang;Xinran Zhang;F. Ren;Yue Yin;T. Feng;W. Song;Guodong Wang;M. Liang;Jianlong Xu;Jianwei Wang;Junxi Wang;Jinmin Li;X. Yi;Zhiqiang Liu
报道了一种高响应度的氮化镓纳米线紫外光探测器。采用水平氢化物气相外延法生长了GaN纳米线。通过不同的生长条件，NW形态被证明是可调的。采用气-液-固和气-固混合生长模型研究了GaN纳米线的轴向和径向生长。此外，不同形貌的纳米线表现出不同的生长晶体取向，这取决于盐酸的流速。具有较小直径的纳米线显示出更好的光学性质和结晶质量。更重要的是，由单个NW制成的UVA探测器在不同光功率密度下表现出4.35 × 104-1.06 × 105 A/W的优异响应度和1.48 × 107%-3.6 × 107%的外量子效率。高响应度和低生产成本使GaN NW UVA探测器在火灾传感、导弹和火箭预警等应用中极具吸引力。
A gallium nitride (GaN) nanowire (NW) UVA photodetector with high responsivity was reported. The GaN NW was grown by horizontal hydride vapor phase epitaxy. The NW morphology is proved tunable via different growth conditions. The axial and radial growths of GaN NWs were investigated through vapor–liquid–solid and vapor–solid mixed growth models. Besides, NWs with different morphologies exhibit different growth crystal orientations, which depend on the flow rate of HCl. NWs with smaller diameters show better optical properties and crystalline quality. More importantly, the UVA detector fabricated by a single NW exhibits excellent responsivity of 4.35 × 104–1.06 × 105 A/W and external quantum efficiency of 1.48 × 107%–3.6 × 107% under different light power densities. The high responsivity and low production cost make the GaN NW UVA detector extremely attractive for several applications, such as fire sensing and missile and rocket warning.