InAs(100) Surfaces Cleaning by an As-Free Low-Temperature 100 ° C Treatment
InAs(100) Surfaces Cleaning by an As-Free Low-Temperature 100 ° C Treatment
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通过无砷低温 100 °C 处理清洁 InAs(100) 表面
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
A. Brown
中科院分区：
文献类型：
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作者：
M. Losurdo;M. Giangregorio;F. Lisco;P. Capezzuto;G. Bruno;S. Wolter;M. Angelo;A. Brown
采用HF：甲醇湿法刻蚀和原子氢处理相结合的方法去除InAs（100）表面的氧化物，刻蚀温度低至100°C，没有任何稳定As的助熔剂。利用椭圆偏振光谱法实时监测该过程。在这种处理之后，发现表面形态在纳米尺度下非常光滑，有效氧化物厚度降低，并且没有明显的元素In和As水平。此外，我们证明了这种表面对氧化物重整的稳定性。
Oxide removal from InAs(100) surfaces was achieved using a combination of HF:methanol wet etching followed by atomic hydrogen treatment at a temperature as low as 100°C without any stabilizing As flux. The process was monitored in real-time exploiting spectroscopic ellipsometry. Following this treatment, the surface morphology was found to be very smooth at the nanometer scale, with a reduced effective oxide thickness and no appreciable levels of elemental In and As. Furthermore, we demonstrate stability of such surfaces against oxide reformation.