Nondestructively decorating surface textured silicon with nanorod arrays for enhancing light harvesting
Nondestructively decorating surface textured silicon with nanorod arrays for enhancing light harvesting
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DOI：
10.1002/pssa.201330178
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发表时间：
2013-12
期刊：
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通讯作者：
Wen Dong;Chanyan Huang;T. Wei;Yun Zhang;Kenan Zhang;Yan Sun;Xin Chen;N. Dai
中科院分区：
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作者：
Wen Dong;Chanyan Huang;T. Wei;Yun Zhang;Kenan Zhang;Yan Sun;Xin Chen;N. Dai
我们展示了一种含有ZnO纳米棒阵列（ZNAs）的纹理表面抗反射层，用于在宽波长范围内通过基于原子层沉积和溶液生长的非破坏性和直接程序进行光收集。纳米棒阵列的尺寸和形貌可以根据织构形貌进行设计。通过控制mc - Si和c - Si电池的生长条件，详细讨论了ZNAs对它们的要求，同时原子层沉积也用于精确调整。通过纳米棒阵列的修饰，加权平均反射率Rw降低了56%以上，导致外量子效率提高，短路电流密度提高了约3.64%。抗反射方法将为实现可行、兼容和非破坏性的非反射层提供替代机会，从而实现PV电池的最佳光收集。
We demonstrate a textured surface antireflection layer containing ZnO nanorod arrays (ZNAs) for light harvesting in a broad wavelength range by a nondestructive and direct procedure based on atomic‐layer deposition and solution growth. The size and morphology of nanorod arrays can be designed according to the textured morphology. The requirements of ZNAs for mc‐Si and c‐Si cells are discussed in detail by controlling their growth conditions, while atomic‐layer deposition is also used for accurate adjustment. By the decoration of nanorod arrays, the weighted average reflectance Rw decreased by more than 56%, resulting in an enhancement of external quantum efficiency and an improvement of about 3.64% for short‐circuit current density. The antireflection method will open up alternative opportunities for achieving feasible, compatible, and nondestructive nonreflecting layers towards optimal light harvesting for PV cells.