Low-cost fabrication of submicron all polymer field effect transistors
Low-cost fabrication of submicron all polymer field effect transistors
复制标题
亚微米全聚合物场效应晶体管的低成本制造
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
H. Sirringhaus
中科院分区：
文献类型：
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作者：
Jizheng Wang;Jian Gu;F. Zenhausern;H. Sirringhaus
所有聚合物场效应晶体管都是结合纳米压印技术和喷墨印刷技术制成的。用纳米压印光刻技术绘出了具有相当高度的疏水壁和亲水底的沟槽。然后通过喷墨打印将导电聚合物溶液输送到这些沟槽液体容器中。干燥的导电聚合物在附近的沟槽中形成源漏电极，其沟槽长度由设计的两个沟槽之间的间隙精确定义。采用这种低成本工艺，成功地实现了亚微米通道长度的顶栅全聚合物场效应晶体管。
All polymer field effect transistors have been fabricated combining nanoimprint lithography and inkjet printing. Trenches with hydrophilic bottoms confined by hydrophobic walls with considerable height are patterned by nanoimprint lithography. Conducting polymer solutions were then delivered into these trench liquid containers by inkjet printing. Dried conducting polymer in nearby trenches forms source-drain electrodes with the channel length accurately defined by the gap in between the designed two trenches. Top-gate all polymer field effect transistors with submicron channel lengths were successfully realized by such low-cost process.