THE ELECTRIC SUB-BAND STRUCTURE OF ELECTRON ACCUMULATION LAYERS IN INSE FROM SHUBINKOV-DEHAAS OSCILLATIONS AND INTER-SUB-BAND RESONANCE
THE ELECTRIC SUB-BAND STRUCTURE OF ELECTRON ACCUMULATION LAYERS IN INSE FROM SHUBINKOV-DEHAAS OSCILLATIONS AND INTER-SUB-BAND RESONANCE
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DOI:
10.1088/0022-3719/16/21/027
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发表时间:
1983-01-01
期刊:
影响因子:
--
通讯作者:
CHEVY, A
中科院分区:
文献类型:
--
作者:
KRESSROGERS, E;HOPPER, GF;CHEVY, A
In bulk InSe crystals grown by the Bridgman method, electron accumulation layers are formed in the vicinity of stacking faults with charged impurities adsorbed to the defect plane. Shubnikov-de Haas experiments show that the 2D electron gas in InSe observed at low temperatures has a density of 10 12 cm-2 and that several dielectric sub-bands are occupied. The g-factor is enhanced by electron-electron interactions. The optical absorption was studied in the frequency range 3-20 meV in perpendicular and tilted magnetic fields up to 8T. The cyclotron resonance at E res= h (cross) omega c, the intersubband resonance at E res= E 01 and the combined resonance at E res= E 01+ h (cross) omega c, are all observed for both parallel and tilted polarisation, where E 01 is equal to the sub-band separation as deducted from the Shubnikov-de Haas periodicities. With increasing magnetic fields the exciton-and depolarisation-shifted resonance E 01 approaches the true sub-band splitting E 01, and is the same time reduced in amplitude. Absorption due to bulk 1s-2p transitions in isolated shallow donors is also observed. The 2p level shows a three-dimensional Zeeman splitting (h (cross) omega c) 3D with a weak anomalous mass anisotropy as observed in cyclotron resonance measurements of bulk carriers at temperatures of 30-100K. The effective electronic Rydberg is in agreement with results of exciton spectra.