Ambipolar all-polymer bulk heterojunction field-effect transistors
Ambipolar all-polymer bulk heterojunction field-effect transistors
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DOI：
10.1039/b919596c
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发表时间：
2010-02
影响因子：
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通讯作者：
K. Szendrei;D. Jarzab;Zhihua Chen;A. Facchetti;M. Loi
中科院分区：
文献类型：
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作者：
K. Szendrei;D. Jarzab;Zhihua Chen;A. Facchetti;M. Loi
我们展示了溶液可加工的全聚合物基场效应晶体管（fet），具有相当的电子和空穴迁移率。半导体层是聚{[N，N ' -双（2-辛基十二烷基）-萘-1,4,5,8-双（二碳酰亚胺）-2,6-二基]-盐-5,5 ' -（2,2 ' -二噻吩）}（N型聚合物）和区域规则聚（3-己基噻吩）（p型聚合物）的体异质结。这些聚合物形成了ii型异质结，与原始材料相比，共混物的光致发光动力学更快。从底接触场效应管的转移特性中提取出电子迁移率为4 × 10−3 cm2/V s，空穴迁移率为2 × 10−3 cm2/V s。原子力显微镜相图证实，平衡的迁移率表明活性层是两个组分的精细网络。
We demonstrate solution processable all-polymer based field-effect transistors (FETs) exhibiting comparable electron and hole mobilities. The semiconducting layer is a bulk heterojunction of poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)} (n-type polymer) and regioregular poly(3-hexylthiophene) (p-type polymer). These polymers form a type-II heterojunction as revealed by the faster photoluminescence dynamics of the blend compared to the pristine materials. An electron mobiliy of 4 × 10−3 cm2/V s and a hole mobility of 2 × 10−3 cm2/V s were extracted from the transfer characteristics of bottom contact FETs. The balanced mobilities suggest that the active layer is a fine network of the two components, as confirmed by atomic force microscopy phase images.