A monolithic 24-GHz frequency source using InP-based HEMT-HBT integration technology
A monolithic 24-GHz frequency source using InP-based HEMT-HBT integration technology
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采用基于 InP 的 HEMT-HBT 集成技术的单片 24 GHz 频率源
DOI：
10.1109/rfic.1997.598746
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发表时间：
1997
期刊：
影响因子：
--
通讯作者：
K. Stamper
中科院分区：
文献类型：
--
作者：
H. Wang;E. Lin;D. Lo;R. Lai;L. Tran;J. Cowles;Y.C. Chen;T. Block;P. Liu;H. Yen;K. Stamper
本文介绍了基于inp的HEMT-HBT集成技术的24ghz单片频率源的开发。该频率源由一个24 ghz HBT压控振荡器（VCO）和一个HEMT缓冲放大器组成，并在一块3 mil厚的InP衬底上制造。测量振荡频率为24.6 GHz，输出功率为4.2 dBm。这是使用基于inp的HEMT-HBT集成技术的MMIC首次成功演示。
This paper presents the development of a 24-GHz monolithic frequency source using InP-based HEMT-HBT integration technology. This frequency source consists of a 24-GHz HBT voltage controlled oscillator (VCO) and a HEMT buffer amplifier, and was fabricated on a single 3-mil thick InP substrate. It exhibits a measured oscillation frequency of 24.6 GHz with an output power of 4.2 dBm. This is the first successful demonstration of MMIC using InP-based HEMT-HBT integration technology.