Transparent conductive Sn‐doped indium oxide coatings deposited by reactive sputtering with a post cathode
Transparent conductive Sn‐doped indium oxide coatings deposited by reactive sputtering with a post cathode
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通过后阴极反应溅射沉积透明导电 Sn 掺杂氧化铟涂层
DOI：
10.1116/1.568876
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发表时间：
1976
期刊：
影响因子：
--
通讯作者：
Virgle L. Hedgcoth
中科院分区：
文献类型：
--
作者：
J. Thornton;Virgle L. Hedgcoth
一种具有磁性等离子体容器的直流阴极后溅射装置(1)最大限度地减少了基底等离子体轰击，(2)可在很宽的工作气体压力范围内操作，(3)可扩展到大面积，用于在各种基底温度（20°至400°C）和氧气压力（0.04-4 Pa）下在玻璃和石英基底上反应性溅射铟锡氧化物涂层（3000-15 000 A厚）。电阻率、光学透射和反射、折射率、表面形貌（通过扫描电镜）和晶体结构（通过x射线衍射）的测定既可以用于沉积涂层，也可以作为在空气和成型气体中热处理的函数。X射线衍射测量了大约10000 A厚的涂层，得到了在沉积和热处理状态下的晶体结构。砷沉积涂层表现出较高的电阻率。在中等压力下沉积的涂层，然后进行热处理，产生的电学和光学性能与…
A dc post‐cathode sputtering apparatus with magnetic plasma containment that (1) minimizes substrate plasma bombardment, (2) is operable over a wide working‐gas pressure range, and (3) is scalable to large areas was used to reactively sputter indium–tin oxide coatings (3000–15 000 A thick) onto glass and quartz substrates at various substrate temperatures (20° to 400 °C) and oxygen pressures (0.04–4 Pa). Resistivity, optical transmission and reflection, refractive index, surface topography (by SEM), and crystal structure (by x‐ray diffraction) determinations were made both for as‐deposited coatings, and also as a function of heat treatment in air and forming gas. X‐ray diffraction measurements on coatings approximately 10 000 A thick yielded crystalline structures in the as‐deposited and heat‐treated states. The as‐deposited coatings exhibited relatively high resistivities. Coatings deposited at moderate pressures and then heat treated yielded electrical and optical properties similar to those reported by...