Room-temperature ferromagnetism in a II-VI diluted magnetic semiconductor Zn1-xCrxTe
Room-temperature ferromagnetism in a II-VI diluted magnetic semiconductor Zn1-xCrxTe
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DOI：
10.1103/physrevlett.90.207202
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发表时间：
2003-05-23
影响因子：
8.6
通讯作者：
Ando, K
中科院分区：
文献类型：
--
作者：
Saito, H;Zayets, V;Ando, K
研究了掺铬的II-VI族半导体材料ZnTe的磁性和磁光性质。磁性圆二色谱测量表明，SP载流子与局域d自旋之间存在着很强的相互作用，表明Zn1-xCrxTe是一种稀磁半导体。X=0.20时薄膜的居里温度估计为300+/-10K，这是迄今报道的证实了sp-d相互作用的稀磁半导体的最高值。尽管具有较高的居里温度，但Zn1-xCrxTe薄膜仍具有半导体电输运特性。
The magnetic and magneto-optical properties of a Cr-doped II-VI semiconductor ZnTe were investigated. Magnetic circular dichroism measurements showed a strong interaction between the sp carriers and localized d spins, indicating that Zn1-xCrxTe is a diluted magnetic semiconductor. The Curie temperature of the film with x=0.20 was estimated to be 300+/-10 K, which is the highest value ever reported for a diluted magnetic semiconductor in which sp-d interactions were confirmed. In spite of its high Curie temperature, Zn1-xCrxTe film shows semiconducting electrical transport properties.