Effect of proton irradiation on the mobility of two-dimensional electron in AlGaN/AlN/GaN high electron mobility transistors at low temperature
Effect of proton irradiation on the mobility of two-dimensional electron in AlGaN/AlN/GaN high electron mobility transistors at low temperature
复制标题
低温质子辐照对AlGaN/AlN/GaN高电子迁移率晶体管二维电子迁移率的影响
DOI：
10.1116/1.5134840
复制
发表时间：
2020-01
影响因子：
1.4
通讯作者：
Malik Salamat Ali
中科院分区：
文献类型：
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作者：
Tang Jinjin;Liu Guipeng;Zhao Guijuan;Xing Shu’an;Malik Salamat Ali
模拟了质子辐照对器件造成的损伤，分析了质子辐照对二维电子迁移率的影响，并考虑了各种散射机制。利用SRIM软件对AlGaN/AlN/GaN HEMT器件进行了质子辐照模拟，得到了辐照模拟结果。在此基础上，考虑各种散射机制，建立了低温下不同质子能量和辐照剂量下二维电子迁移率的数值模拟模型。理论数据表明，质子辐照显著降低了低温下GaN基HEMT中二维电子的迁移率。
The authors simulated the damage caused by proton irradiation to the device and analyzed the effect of proton irradiation on two-dimensional electron mobility taking various scattering mechanisms into account. Proton-irradiation simulation of the AlGaN/AlN/GaN HEMT device was carried out to obtain the irradiation simulation results by using SRIM software. Then, considering various scattering mechanisms, the authors established a model to simulate two-dimensional electron mobility under different proton energy and irradiation doses at low temperature. The theoretical data show that proton irradiation significantly decreased the mobility of a two-dimensional electron in a GaN-based HEMT at low temperature.