Robust spin-orbit torque and spin-galvanic effect at the Fe/GaAs (001) interface at room temperature.
Robust spin-orbit torque and spin-galvanic effect at the Fe/GaAs (001) interface at room temperature.
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DOI：
10.1038/ncomms13802
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发表时间：
2016-12-13
影响因子：
16.6
通讯作者：
中科院分区：
文献类型：
--
作者：
界面自旋轨道转矩（SOTs）可以通过面内电荷流控制磁化，这在自旋电子学应用中引起了越来越多的关注。寻找提供高效sot的材料体系，主要集中在多晶铁磁性金属/非磁性金属双分子层上。在这些系统中，在非磁性层中流动的电流，由于强大的自旋-轨道相互作用，通过自旋霍尔效应产生自旋电流，并在铁磁体的界面处产生转矩。在这里，我们报告了在室温下在单晶Fe/GaAs（001）界面上观察到的坚固的SOT。我们发现，由界面对称性降低引起的界面SOT的大小与铁磁性金属/非磁性金属系统中相当强。界面处的大自旋轨道场也使界面处的自旋-电荷电流转换成为可能，称为自旋-电偶效应。结果表明，单晶Fe/GaAs界面可以实现高效的电磁化操作。界面自旋轨道转矩允许磁化的电操纵，但这主要表现在多晶金属双层中。在室温下，单晶Fe/GaAs界面显示出强大的自旋轨道转矩，观察到自旋和电荷电流之间的转换。
Interfacial spin-orbit torques (SOTs) enable the manipulation of the magnetization through in-plane charge currents, which has drawn increasing attention for spintronic applications. The search for material systems providing efficient SOTs, has been focused on polycrystalline ferromagnetic metal/non-magnetic metal bilayers. In these systems, currents flowing in the non-magnetic layer generate—due to strong spin–orbit interaction—spin currents via the spin Hall effect and induce a torque at the interface to the ferromagnet. Here we report the observation of robust SOT occuring at a single crystalline Fe/GaAs (001) interface at room temperature. We find that the magnitude of the interfacial SOT, caused by the reduced symmetry at the interface, is comparably strong as in ferromagnetic metal/non-magnetic metal systems. The large spin-orbit fields at the interface also enable spin-to-charge current conversion at the interface, known as spin-galvanic effect. The results suggest that single crystalline Fe/GaAs interfaces may enable efficient electrical magnetization manipulation. Interfacial spin-orbit torque allows electrical manipulation of magnetization, but this has been shown mostly in polycrystalline metal bilayers. Here the authors show robust spin-orbit torque in single crystalline Fe/GaAs interface at room temperature, observing conversion between spin and charge current.
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影响因子：
2.1
作者：
EDELSTEIN, VM
通讯作者：
EDELSTEIN, VM
影响因子：
38.3
作者：
Garello, Kevin;Miron, Ioan Mihai;Gambardella, Pietro
通讯作者：
Gambardella, Pietro
影响因子：
3.7
作者：
Qaiumzadeh, A.;Duine, R. A.;Titov, M.
通讯作者：
Titov, M.
影响因子：
8.6
作者：
Gmitra, Martin;Matos-Abiague, Alex;Fabian, Jaroslav
通讯作者：
Fabian, Jaroslav
影响因子：
19.6
作者：
Ciccarelli, C.;Anderson, L.;Jungwirth, T.
通讯作者：
Jungwirth, T.