Photoconductive semiconductor switches

Photoconductive semiconductor switches
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DOI:
10.1109/27.602482
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发表时间:
1997-04
影响因子:
1.5
通讯作者:
G. Loubriel;F. Zutavern;A. Baca;H. Hjalmarson;T. A. Plut;W. Helgeson;M. O’Malley;M. Ruebush;D. Brown
G. Loubriel;F. Zutavern;A. Baca;H. Hjalmarson;T. A. Plut;W. Helgeson;M. O’Malley;M. Ruebush;D. Brown
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
G. Loubriel;F. Zutavern;A. Baca;H. Hjalmarson;T. A. Plut;W. Helgeson;M. O’Malley;M. Ruebush;D. Brown

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在高增益模式下工作的光激活GaAs开关正被用于或测试各种脉冲功率应用,如弹药中的低阻抗、高电流点火装置;激光器的高阻抗、低电流普克尔盒或Q开关驱动器;激光二极管阵列的高压驱动器;高压、高电流、紧凑型加速器;以及探地雷达的脉冲发生器。本文将描述高增益光电导半导体开关(PCSS)的特性,以及它们如何用于各种脉冲功率应用。对于发射装置,我们在一个非常紧凑的封装中转换了高达7 kA的电流。对于驱动Q开关,负载是充电到6 kV的Q开关的小电容(30 pF)。我们已经证明,我们可以调制一个激光束与亚纳秒上升时间。使用PCSS,我们已经证明了增益开关的串联连接的激光二极管阵列,获得的光输出的峰值功率为50千瓦,脉冲宽度为100 ps。对于加速器,我们使用PCSS来切换260 kV,60 kA Blumlein。一种适用于探地雷达的脉冲发生器已在100 kV,1.3 kA下得到验证。本文将描述所有这些应用中的具体项目要求和开关参数,并强调正在进行的开关研究和开发,以解决重要问题。
Optically activated GaAs switches operated in their high-gain mode are being used or tested for pulsed power applications as diverse as low-impedance, high-current firing sets in munitions; high impedance, low-current Pockels cell or Q-switch drivers for lasers; high-voltage drivers for laser diode arrays; high-voltage, high-current, compact accelerators; and pulsers for ground penetrating radar. This paper will describe the properties of high-gain photoconductive semiconductor switches (PCSS), and how they are used in a variety of pulsed power applications. For firing sets, we have switched up to 7 kA in a very compact package. For driving Q switches, the load is the small (30 pF) capacitance of the Q switch which is charged to 6 kV. We have demonstrated that we can modulate a laser beam with a subnanosecond rise time. Using PCSS, we have demonstrated gain switching a series-connected laser diode array, obtaining an optical output with a peak power of 50 kW and a pulse duration of 100 ps. For accelerators, we are using PCSS to switch a 260 kV, 60 kA Blumlein. A pulser suitable for use in ground-penetrating radar has been demonstrated at 100 kV, 1.3 kA. This paper will describe the specific project requirements and switch parameters in all of these applications, and emphasize the switch research and development that is being pursued to address the important issues.