Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells
Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells
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用于四结太阳能电池的具有 1 eV 带隙的 MBE 生长的 InGaAsP 层的载流子复合动力学
DOI：
10.1016/j.solmat.2014.03.051
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发表时间：
2014
影响因子：
6.9
通讯作者：
Yang Hui
中科院分区：
文献类型：
--
作者：
Ji Lian;Lu Shulong;Wu Yuanyuan;Dai Pai;Bian Lifeng;Arimochi Masayuki;Watanabe Tomomasa;Asaka Naohiro;Uemura Mitsunori;Tackeuchi Atsushi;Uchida Shiro;Yang Hui
通过时间分辨光致发光 (PL) 测量，研究了固体源分子束外延生长的四结太阳能电池中带隙能量为 1 eV 的 InGaAsP 材料的载流子复合动力学。对于名义上未掺杂的材料，PL 衰减时间随着温度的升高而增加，这表明辐射复合在复合过程中占主导地位。根据温度相关的 PL 衰减时间和积分 PL 强度计算辐射和非辐射复合时间常数。随着Be（作为p型掺杂剂）掺入材料中，PL衰减时间随着温度的升高而缩短，并且在掺杂密度较高的材料的情况下观察到双指数PL衰减曲线。制备了带隙为1 eV的InGaAsP基单结光伏器件，在AM1.5G太阳光谱下获得了16.4%的效率。
The carrier recombination dynamics of InGaAsP material with a bandgap energy of 1 eV for quadruple-junction solar cells grown by solid-source molecular beam epitaxy have been investigated by the employment of time-resolved photoluminescence (PL) measurement. For the nominally undoped material, the PL decay time increases with increasing temperature, which indicates that radiative recombination dominates the recombination process. The radiative and the nonradiative recombination time constants were calculated on the basis of the temperature-dependent PL decay time and the integrated PL intensity. With the incorporation of Be (as the p-type dopant) into the material, the PL decay time decreases with increasing temperature, and a double-exponential PL decay curve is observed in the case of the material with a higher doping density. An InGaAsP-based single-junction photovoltaic device with a bandgap of 1 eV was fabricated, and an efficiency of 16.4% was obtained under the AM1.5G solar spectra.