On the use of alloying elements for Cu interconnect applications
On the use of alloying elements for Cu interconnect applications
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DOI：
10.1116/1.2357744
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发表时间：
2006-10
影响因子：
1.4
通讯作者：
K. Barmak;C. Cabral;K. Rodbell;J. Harper
中科院分区：
文献类型：
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作者：
K. Barmak;C. Cabral;K. Rodbell;J. Harper
为了解决合金化元素在集成电路中铜互连应用的未来应用，首先是可用的大量实验数据，如每at的剩余电阻率。%溶质相图和二元相图被用来得到一组24种潜在元素。接下来，薄膜和线条的实验结果允许作者得到一个较小的集合，包括Pd、Au、Al、Ag、Nb、Cr、B、Ti、In和Mn等10个优先考虑的元素和6个优先考虑的锌、V、C、镁、P和锡元素，以供进一步研究。在支持或反对在铜中添加合金化之前，还需要进行这些额外的研究。现有的薄膜和线条数据汇总在一系列表格中，这些表格对读者应该是有用的。特别是，薄膜数据使作者能够获得每At的有效平均剩余电阻率(EARR)。%溶质，它综合了杂质散射、第二相析出和由…
To address the future use of alloying elements for Cu interconnect applications in integrated circuits, first, available bulk experimental data such as residual resistivity per at. % solute and binary phase diagrams are used to arrive at a set of 24 potential elements. Next, experimental results in thin films and lines allow the authors to arrive at a smaller set that includes ten elements, namely, Pd, Au, Al, Ag, Nb, Cr, B, Ti, In, and Mn, with higher priority and six, namely, Zn, V, C, Mg, P, and Sn with lower priority for further studies. These additional studies are needed before a strong case for or against alloying additions to Cu can be made. The available thin film and line data are summarized in a series of tables that should prove useful for the readers. In particular, the thin film data allow the authors to obtain an effective average residual resistivity (EARR) per at. % solute that combines the effects of impurity scattering, second phase precipitates, and grain size refinement resulting from...