PHOTOLUMINESCENCE OF SINGLE SEMICONDUCTOR NANOCRYSTALLITES BY 2-PHOTON EXCITATION MICROSCOPY
PHOTOLUMINESCENCE OF SINGLE SEMICONDUCTOR NANOCRYSTALLITES BY 2-PHOTON EXCITATION MICROSCOPY
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DOI：
10.1016/0009-2614(94)01057-9
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发表时间：
1994-10-28
影响因子：
2.8
通讯作者：
GUYOTSIONNEST, P
中科院分区：
文献类型：
--
作者：
BLANTON, SA;DEHESTANI, A;GUYOTSIONNEST, P
对半导体纳米微晶（NC）特性的准确了解可能决定它们在未来光学器件中的用途。然而，由于合成方法无法产生完全均质的NC，因此光谱和动态响应通常是平均特性。我们使用双光子显微镜检查单个 NC，并获得窄发光线宽（55 埃 CdS 中为 15 meV）。该技术应该广泛适用于单分子光谱学和埋入界面（例如量子阱）的局部探测。
Precise knowledge of the properties of semiconductor nanocrystallites (NCs) may determine their use in future optical devices. However, since synthesis methods are not able to yield perfectly homogeneous NCs, spectral and dynamic responses are usually averaged properties. We examine single NCs using two-photon microscopy and obtain narrow luminescence linewidths (15 meV in 55 Angstrom CdS). This technique should be broadly applicable to single molecule spectroscopy and local probing of buried interfaces, such as quantum wells.