Investigation of the reliability of 4H-SiC MOS devices for high temperature applications
Investigation of the reliability of 4H-SiC MOS devices for high temperature applications
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DOI：
10.1016/j.microrel.2011.03.015
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发表时间：
2011-08-01
影响因子：
1.6
通讯作者：
Ryssel, Heiner
中科院分区：
文献类型：
--
作者：
Le-Huu, Martin;Schmitt, Holger;Ryssel, Heiner
在本文中，4 H-SiC MOS器件在高温工作期间的优良可靠性被证明为在N（2）O中处理的栅极氧化物。一个温度依赖的福勒-诺德海姆分析是用来表明，统计能量扩散占的报告温度引起的势垒高度退化的一部分。Poole-Frenkel电流所造成的受体一样的陷阱，在氧化物中，由于碳材料的建议是负责观察到的额外的电流。温度和电场加速的时间介质击穿的研究在高温下，以预测预期的MOS寿命在高温操作。(C)2011爱思唯尔有限公司保留所有权利。
In this paper, the excellent reliability of 4H-SiC MOS devices during high temperature operation is demonstrated for a gate oxide processed in N(2)O. A temperature dependent Fowler-Nordheim analysis is used to show that statistical energy spreading accounts for only part of the reported temperature induced barrier height degradation. Poole-Frenkel current caused by acceptor like traps in the oxide due to carbon interstitials is proposed to be responsible for the additional current observed. Temperature and electric field acceleration of the time to dielectric breakdown is investigated at elevated temperatures in order to predict the expected MOS lifetime during high temperature operation. (C) 2011 Elsevier Ltd. All rights reserved.