Electron Emission Study of Planar-Type Electron Emission Devices Based on Nanocrystalline Silicon
Electron Emission Study of Planar-Type Electron Emission Devices Based on Nanocrystalline Silicon
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基于纳米晶硅的平面型电子发射器件的电子发射研究
DOI：
10.1149/09204.0223ecst
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
Nagao Masayoshi
中科院分区：
文献类型：
--
作者：
Shimawaki Hidetaka;Mimura Hidenori;Murakami Katsuhisa;Nagao Masayoshi
为了提高平面型纳米硅电子发射器件的性能，研究了氧化纳米硅（nc-Si）电子发射器件的电子发射特性。较薄的栅电极具有较高的发射电流和发射效率，通过减小最顶部电极的厚度，发射效率提高到4%。激光辐照使发射电流提高了约两个数量级。此外，我们展示了激光脉冲诱导的，光调制的电子发射从nc-Si基器件。
The electron emission properties of planar-type electron emission devices based on oxidized nanocrystalline silicon (nc-Si) were investigated to improve the performance. The emission current and the emission efficiency are higher for the thinner gate electrode, and the emission efficiency was enhanced to 4% by reducing the topmost electrode thickness. The emission current was enhanced by about two orders of magnitude by laser irradiation. In addition, we demonstrated laser pulse-induced, optically-modulated electron emission from the nc-Si based device.