Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN
Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN
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DOI：
10.1063/1.3656987
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发表时间：
2011-11
影响因子：
3.2
通讯作者：
R. Kirste;R. Collazo;G. Callsen;M. R. Wagner;T. Kure;J. Reparaz;S. Mita;Jinqiao Xie;A. Rice;J. Tweedie;Z. Sitar;A. Hoffmann
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文献类型：
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作者：
R. Kirste;R. Collazo;G. Callsen;M. R. Wagner;T. Kure;J. Reparaz;S. Mita;Jinqiao Xie;A. Rice;J. Tweedie;Z. Sitar;A. Hoffmann
我们报道了氮化镓横向极性结的基本结构和光学性质。使用氮化铝缓冲层在蓝宝石上生长了具有镓极性到氮极性结的氮化镓。扫描电子显微镜和拉曼光谱测量结果表明镓极性氮化镓具有优异的质量。在反相畴界（IDB）处观察到极强的发光信号。利用温度相关的微光致发光测量来揭示这种强发射背后的复合过程。在5K时，发射主要来自沿反相畴界厚度为4 - 5μm的条带。温度升高最初导致发射区域宽度缩小到2μm以下，然后在70K以上温度时变宽。低温下相对较宽的发射区域由倾斜的反相畴界解释。结果表明，发射区域宽度的所有其他变化都与载流子的热化效应以及缺陷吸引……
We report on fundamental structural and optical properties of lateral polarity junctions in GaN. GaN with Ga- to N-polar junctions was grown on sapphire using an AlN buffer layer. Results from scanning electron microscopy and Raman spectroscopy measurements indicate a superior quality of the Ga-polar GaN. An extremely strong luminescence signal is observed at the inversion domain boundary (IDB). Temperature dependent micro photoluminescence measurements are used to reveal the recombination processes underlying this strong emission. At 5 K the emission mainly arises from a stripe along the inversion domain boundary with a thickness of 4-5 μm. An increase of the temperature initially leads to a narrowing to below 2 μm emission area width followed by a broadening at temperatures above 70 K. The relatively broad emission area at low temperatures is explained by a diagonal IDB. It is shown that all further changes in the emission area width are related to thermalization effects of carriers and defects attracte...