Conducted emission characteristics of CCM boost converter with SiC schottky barrier diode
Conducted emission characteristics of CCM boost converter with SiC schottky barrier diode
复制标题
采用 SiC 肖特基势垒二极管的 CCM 升压转换器的传导发射特性
DOI：
10.1109/isemc.2015.7256305
复制
发表时间：
2015
期刊：
影响因子：
--
通讯作者：
T. Funaki
中科院分区：
文献类型：
--
作者：
T. Ibuchi;T. Funaki
二极管关断时的振铃振荡会产生电磁干扰噪声，特别是在快速开关操作中。本研究比较了具有相当电压和电流额定值的Si PiN二极管和三种类型的SiC肖特基势垒二极管的静态和动态特性，并重点研究了二极管特性对连续电流模式（CCM） DC-DC升压变换器传导发射的影响。用proony方法计算了二极管关断时电流的动态特性。测量传导噪声的谱图，以了解噪声源如何影响传导噪声发射。
The ringing oscillation in turn-off of diode may induce electromagnetic interference (EMI) noise especially in fast switching operation. This study compares static and dynamic characteristics of a Si PiN diode and three type SiC Schottky barrier diodes, which have comparable voltage and current ratings, and focuses on the influence of diode characteristics on conducted emission of the continuous current mode (CCM) DC-DC boost converter. The dynamic characteristics of diode current in turn-off operation are evaluated by Prony's method. The spectrogram of conducted emission is measured to understand how the noise source could affect the conducted noise emission.