Highly stable perpendicular magnetic anisotropies of CoFeB/MgO frames employing W buffer and capping layers
Highly stable perpendicular magnetic anisotropies of CoFeB/MgO frames employing W buffer and capping layers
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DOI：
10.1016/j.actamat.2015.01.022
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发表时间：
2015-04-01
期刊：
影响因子：
9.4
通讯作者：
Hong, Jin-Pyo
中科院分区：
文献类型：
--
作者：
An, Gwang-Guk;Lee, Ja-Bin;Hong, Jin-Pyo
典型的CoFeB/MgO框架确保界面垂直磁各向异性（PMA）特征是满足基于PMA的存储器件需求的最可靠的构建块之一。然而，采用具有Ta缓冲层的CoFeB/MgO框架受到在大于300摄氏度的温度下退火期间发生的快速PMA劣化以及需要大约1.3nm的可烧结CoFeB层的限制。因此，增强热强PMA特性的能力仍然是扩大其使用的关键一步。在这里，我们研究的影响，W层PMA功能通过W缓冲/CoFeB/MgO和MgO/CeFeB/W盖帽框架在不同的退火温度。在特定的W厚度下，在高达450 ℃下实现了高度稳定的PMA，沿着，在大于1.3 nm的相对厚的CoFeB下存在主要的PMA性质，并且实现了约5 Merg/cc的高K-eff。(C)2015 Acta Materialia Inc.由爱思唯尔有限公司出版。保留所有权利。
Typical CoFeB/MgO frames ensuring interface perpendicular magnetic anisotropy (PMA) features are one of the most reliable building blocks to meet the demand of PMA-based memory devices. However, employing the CoFeB/MgO frame with a Ta buffer layer has been restricted by the rapid PMA degradation that occurs during annealing at temperatures greater than 300 degrees C and the need of an ultrathin CoFeB layer of approximately 1.3 nm. Thus, the ability to enhance thermally strong PMA characteristics is still a key step toward extending their use. Here, we examine the effect of W layers on PMA features through both W buffer/CoFeB/MgO and MgO/CeFeB/W capping frames at various annealing temperatures. Highly stable PMA was achieved up to 450 degrees C at a specific W thickness, along with the presence of the dominant PMA properties at a relatively thick CoFeB greater than 1.3 nm and the achievement of a high K-eff of approximately 5 Merg/cc. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.